CAPE Physics Unit 2 · 2014 · Paper 2 · Question 2(b)(i)

The forward bias characteristic I_D vs V_D of a junction diode is modelled by I_D = I_s \exp(V_D / V_T), where V_T = 27\text{ mV} at 30^\circ\text{C}. Experimental values of V_D / V_T and I_D are given in Table 2.

Complete Column 3 of Table 2 by calculating \ln(I_D).

This question uses a figure or table from the paper — you'll see it when you practise.